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| BAS 70-06S Silicon Schottky Diode Array * General-purpose diode for high-speed switching * Circuit protection * Voltage clamping * High-level detecting and mixing * Available with CECC quality assessment 4 5 6 2 1 3 VPS05604 Type BAS 70-06S Marking Ordering Code 76s Q62702-A3469 Pin Configuration 1/4=C1 2/5=C2 Package 3/6=A1/A2SOT-363 Maximum Ratings Parameter Diode reverse voltage Forward current Surge forward current (t< 100s) Total power dissipation, T S 72 C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient 1) Symbol Value 70 70 100 250 150 - 55 ...+150 - 55 ...+150 Unit V mA mW C VR IF IFSM Ptot Tj Top Tstg RthJA RthJS 545 310 K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 BAS 70-06S Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage typ. max. - Unit V(BR) IR 70 V A I (BR) = 10 A Reverse current VR = 50 V VR = 70 V Forward voltage - 375 705 880 0.1 10 mV 410 750 1000 VF 300 600 750 I F = 1 mA I F = 10 mA I F = 15 mA AC characteristics Diode capacitance CT - 1.6 30 2 100 - pF ps VR = 0 V, f = 1 MHz Charge carrier life time I F = 25 mA Differential forward resistance rf I F = 10 mA, f = 100 MHz Semiconductor Group Semiconductor Group 22 Sep-07-1998 1998-11-01 BAS 70-06S Forward current IF = f (TA*;TS) * Package mounted on epoxy 100 mA IF 60 TS TA 40 20 0 0 20 40 60 80 100 120 C 150 TA,TS Permissible Pulse Load R thJS = f(t p) Permissible Pulse Load IFmax / IFDC = f(tp) 10 3 10 2 K/W IFmax / IFDC - RthJS 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 33 Sep-07-1998 1998-11-01 BAS 70-06S Forward current IF = f (V F) Reverse current IR = f (VR) T A = Parameter 10 2 BAS 70W/BAS 170W EHB00042 TA = Parameter 10 2 BAS 70W/BAS 170W EHB00043 F mA 10 1 R A 10 1 TA = 150 C 10 0 85 C 10 0 10 -1 TA = -40 C 25 C 85 C 150 C 10 -1 10 -2 25 C 10 -2 0.0 0.5 1.0 V 1.5 10 -3 0 20 40 60 V 80 VF VR Diode capacitance CT = f (V R) f = 1MHz BAS 70W/BAS 170W EHB00044 Differential forward resistance rf = f (IF) f = 10 kHz 2.0 10 3 BAS 70W/BAS 170W EHB00045 CT pF rf 1.5 10 2 1.0 10 1 0.5 0.0 0 20 40 60 V 80 10 0 0.1 1 10 mA 100 VR F 44 Semiconductor Group Semiconductor Group Sep-07-1998 1998-11-01 |
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